| Title |
Analysis of Radiation Effects in CMOS 0.18um Process Unit Devices |
| Authors |
정상훈(Jeong, Sang-Hun) ; 이남호(Lee, Nam-Ho) ; 이민웅(Lee, Min-Woong) ; 조성익(Cho, Seong-Ik) |
| DOI |
https://doi.org/10.5370/KIEE.2017.66.3.540 |
| Keywords |
Pulse radiation ; Radiation Effects ; Leakage Current ; Dose-rate |
| Abstract |
In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of 3.16×10^8rad(si)/s. In that test nMOESFET generated a large amount of photocurrent at a maximum of 3.16×10^8rad(si)/s. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices. |