| Title |
Forward Current-Voltage Characteristics for P-type Diamond Schottky Barrier Diodes Using Low-Field Mobility Model |
| Authors |
김규남(Gyunam Kim) ; 문정현(Jeong Hyun Moon) ; 하민우(Min-Woo Ha) |
| DOI |
http://doi.org/10.5370/KIEE.2019.68.2.310 |
| Keywords |
Diamond ; Schottky barrier diode ; Power device ; Mobility |
| Abstract |
In this manuscript, we reported forward current-voltage characteristics of p-type diamond Schottky barrier diodes using a low-field mobility model. A conventional hole mobility was fixed at 2000cm2/Vs while our low-field mobility model considered ionized impurity scattering and temperature dependency. When a doping concentration of a p- drift layer was 1014, 1015, 1016, and 1017cm-3, the hole mobility was 1803, 786, 279, and 115cm2/Vs at 3V, respectively. The calculated on-resistance of the device was 3.28, 14.21, and 24.78 Ωmm at 200, 300, and 400K, respectively. |