| Title |
Subthreshold Swing Variation in p-type LTPS TFT Under Short-Term Voltage and Temperature Stress |
| DOI |
https://doi.org/10.5370/KIEE.2024.73.5.807 |
| Keywords |
Thin-film transistors (TFTs); low temperature poly crystalline silicon (LTPS); subthreshold swing (SS); active matrix organic light emitting diode(AMOLED); short-term image sticking (STIS) |
| Abstract |
In this paper, we analyze the short-term degradation characteristics of low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) to analyze the origin of short-term image sticking (STIS) in the mobile display. The STIS effect is highly relevant to the change in electrical characteristics of driving transistor of the pixel circuit. We mainly focus on the subthreshold swing (SS) variation, as the pixel circuits can internally compensate for the variation in threshold voltage. To examine the short-term degradation, each voltage and temperature stress corresponding to white and black grayscales are applied to the LTPS TFT for 10 minutes. We found that these stress conditions induce SS degradation of the LTPS TFT. This degradation can cause current variation of driving transistor, resulting in non-uniform luminance. Thus, the short-term SS degradation is strongly related to the origin of STIS effect. |