| Title |
Design of a 1.2 kV SiC MOSFET Utilizing an H-Shaped Poly-Si Gate |
| Authors |
백두산(Dusan Baek) ; 윤효원(Hyowon Yoon) ; 김상엽(Sangyeob Kim) ; 강규혁(Gyuhyeok Kang) ; 박수민(Sumin Park) ; 석오균(Ogyun Seok) |
| DOI |
https://doi.org/10.5370/KIEE.2025.74.5.905 |
| Keywords |
Silicon Carbide (SiC); MOSFET; H-shaped poly-Si gate (HPG); On-resistance; Gate-to-drain charge; Electric field |
| Abstract |
A 1.2 kV SiC H-shaped poly-Si gate MOSFET (HPG MOSFET) structure was proposed to effectively reduce switching loss without compromising static device characteristics. The structure features a locally etched poly-Si gate electrode, and its performance was analyzed by evaluating the specific on-resistance (Ron,sp), gate-to-drain charge (Qgd,sp), and maximum oxide electric field (Eox,max) at the poly-Si gate corner according to the etched area. Under optimized conditions, the proposed HPG MOSFETs achieved a significant reduction in Qgd,sp with only a negligible increase in Ron,sp compared to conventional SiC planar MOSFETs. Additionally, Eox,max at the gate corner remained below 3 MV/cm. These findings demonstrate that the 1.2 kV SiC HPG MOSFET can significantly enhance energy efficiency. |