| Title |
X-Band Low-Noise Amplifier MMICs Using Wavice’s 0.2 μm GaN HEMT Process |
| Authors |
송인혁(In-Hyuk Song) ; 한성희(Seong-Hee Han) ; 노윤섭(Youn-Sub Noh) ; 임종원(Jong-Won Lim) ; 권지훈(Ji-Hun Kwon) ; 전병철(Buoung-Chul Jun) ; 김동욱(Dong-Wook Kimark) |
| DOI |
https://doi.org/10.5370/KIEE.2025.74.8.1354 |
| Keywords |
X-band; GaN HEMT; Low-Noise Amplifier; MMIC; Source Degeneration |
| Abstract |
In this paper, two types of X-band GaN low-noise amplifier(LNA) monolithic microwave integrated circuits(MMICs) are designed, fabricated, and evaluated using a 0.2 μm GaN HEMT process at Wavice foundry. The low-noise amplifier MMICs use GaN HEMTs with source degeneration microstrip lines, and insert thin-film resistors in shunt (shunt RC) or series configurations into the biasing networks for amplifier stabilization. Input matching of a two-stage amplifier MMIC is implemented to obtain a lower noise figure, and input matching of a three-stage amplifier MMIC is achieved for higher gain and better input return loss. The fabricated two-stage MMIC exhibits a linear gain of 16.2~17.3 dB, a noise figure of 1.31~1.52 dB, and an output P1dB of 26.5 dBm, while the three-stage MMIC achieves a linear gain of 22.5~24.7 dB, a noise figure of 1.67~1.77 dB, and an output P1dB of 25.5 dBm. Both LNA MMICs have a saturated output power of 32.6 dBm. Furthermore, the power measurements show that the three-stage MMIC is endurable up to the input power of 10 W. The MMIC chip dimensions are 1.6×1.5 mm2 for the two-stage amplifier and 1.85×1.5 mm2 for the three-stage amplifier. |