| Title |
Design and Performance Evaluation of a Single-Gate-Driver-Based 5 kV, 20 kHz MOSFET Marx Generator for IEMI-Induced Conducted Transient Overvoltage Pulse Generation |
| Authors |
류주완(Juwan Ryu) ; 박기훈(Kihun Park) ; 나완수(Wansoo Nah) |
| DOI |
https://doi.org/10.5370/KIEE.2026.75.8.1861 |
| Keywords |
IEMI; Marx Generator; MOSFET; Pulse Repetition Rate; Single Gate Driver; High Voltage Pulse; Pulsed Power |
| Abstract |
This paper presents the design and performance evaluation of a 5 kV, 20 kHz high-repetition-rate pulse generator for evaluating the vulnerability of automotive electronic components to IEMI-induced conducted transient overvoltage pulses in future mobility environments. Conventional spark-gap-based Marx generators suffer from voltage control instability due to gap spacing errors and low pulse repetition rates (PRR) below tens of Hz. To overcome these limitations, this study proposes a 5-stage MOSFET Marx generator topology employing power MOSFETs as switching elements, combined with a single active gate driver and multi-stage passive gate driver structure. Steady-state current was derived through R-L time-constant analysis to ensure component ratings and thermal stability. Insulation distance design based on IPC-2221B standards and partial inductance analysis were applied to enhance the electrical reliability of high-voltage PCBs. Stable pulse output was verified at an output voltage of ?5 kV and PRR of 20 kHz through comparison of ADS simulation and experimental results. |