| Title |
Implementation of High-efficiency 1.5kW LDC for xEV using GaN HEMT |
| Authors |
김현빈(Hyun-Bin Kim) ; 김종수(Jong-Soo Kim) |
| DOI |
https://doi.org/10.5370/KIEE.2020.69.2.276 |
| Keywords |
GaN HEMT; GaN FET; LDC; Low voltage dc-dc converter; Phase shedding; high efficiency; Phase-shift Full-bridge converter; PSFB converter |
| Abstract |
This paper deals with how to maximize the efficiency of LDC for xEV by using GaN HEMT and improving control method. First, the characteristics of GaN HEMT are analyzed in detail and the considerations for applying them instead of conventional silicon MOSFETs to the primary side of LDC are described in detail. Second, the possibility of a phase shedding control scheme is presented to improve the low light-load efficiency due to the high step-down ratio of the LDC. Finally, the analysis results of considerations applying GaN HEMT-based synchronous rectifier instead of conventional fast recovery diodes to the secondary side of LDC are presented. The feasibility of the proposed efficiency maximization strategies is verified through a 1.5kW LDC laboratory prototype. The experimental results show high efficiency of more than 95% from 150W load condition and the maximum efficiency of 96.2%. |