| Title |
High Frequency Circuit of Single-phase Inverter for Conducted Noise Analysis delivered to Battery Input |
| Authors |
박상해(Sanghae Park) ; 차한주(Hanju Cha) |
| DOI |
https://doi.org/10.5370/KIEE.2023.72.6.730 |
| Keywords |
CE(Conducted Emission); EMI(Electromagnetic Interference); High-frequenccy circuit model; Parasitic impedance; Q3D Extractor; Single-phase inverter |
| Abstract |
In this paper, a method for predicting the noise generated by IGBT switching during power conversion of a single-phase inverter and transmitted to the input power stage is proposed. A high-frequency impedance component is added to the single-phase inverter circuit configuration and modeled, and each parasitic impedance component is measured in the range of 150 kHz to 30 MHz to accurately predict noise, and a high-frequency detailed circuit model is proposed. In addition, a high-frequency equivalent circuit is modeled with significantly reduced simulation time by reflecting the switching control process from the high-frequency detailed circuit model to the noise source model. The validity of the proposed high-frequency detailed circuit and high-frequency equivalent circuit is verified by constructing a separate test bench and comparing it with the experimental results. As a result, the resonance point of the high-frequency detailed circuit is 91.35dBuV at 7.39MHz, the resonance point of the high-frequency equivalent circuit is 96.36dBuV at 7.23MHz, and the resonance point measured in the actual experiment is 95.76dBuV at 7.33MHz.The proposed prediction method can be applied to the development of applications including single-phase inverter, and based on the predicted analysis results, it can be used to determine the cause and take appropriate measures when the noise exceeds the international standard. |