• 대한전기학회
Mobile QR Code QR CODE : The Transactions of the Korean Institute of Electrical Engineers
  • COPE
  • kcse
  • 한국과학기술단체총연합회
  • 한국학술지인용색인
  • Scopus
  • crossref
  • orcid

References

1 
Chen J. F., Aug 2008, On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors with STI in the Drift Region, IEEE Electron Device Letters, Vol. 29, pp. 1071-1073DOI
2 
Reggiani S., July 2011, Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors, IEEE Tranactions on Electron Devices, Vol. 58, pp. 3072-3080DOI
3 
Reggiani S., Nov 2012, TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors, IEEE Tranactions on Electron Devices, Vol. 60, pp. 691-698DOI
4 
Tallarico A. N., Jan 2018, Hot-Carrier Degradation in Power LDMOS: Selective LOCOS- Versus STI-Based Architecture, IEEE Journal of the Electron Devices Society, Vol. 6, pp. 219-226DOI
5 
Giuliano F., May 2020, TCAD Simulation of Hot-Carrier Stress Degradation in Split-gate n-channel STI-LDMOS Transistors, Microelectronics Reliability, Vol. 109, pp. 113643DOI
6 
Bessia F. A., Oct 2018, Displacement Damage in CMOS Image Sensors after Thermal Neutron Irradiation, IEEE Transtions on Nuclear Science, Vol. 65, pp. 2793-2801DOI
7 
Kim J., Apr 2019, Caution: Abnormal Variability Due to Terrestrial Cosmic Rays in Scaled-Down FinFETs, IEEE Tranactions on Electron Devices, Vol. 66, pp. 1887-1891DOI
8 
Shoji T., Aug 2010, Neutron Induced Single-Event Burnout of IGBT, The 2010 International Power Electronics Conference, pp. 142-148DOI
9 
Guetarni K., Nov 2013, Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model, Microelectronics Reliability, Vol. 53, pp. 1293-1299DOI
10 
Synopsys , 2016, Sentaurus Device User Guide, L-versionGoogle Search
11 
Lannoo M., Bourngoin J., 1981, Point Defects in Semi- conductors I, Theoretical Aspect Springer series in solid state scienceGoogle Search
12 
Antonelli A., Kaxiras E., Chadi D. J., 1998, Vacancy in Silicon Revisited: Structure and Pressure Effects, Physical Review Letters, Vol. 81, No. 10, pp. 2088-2091DOI
13 
Centoni S. A., Sadigh B., Gilmer G. H., Lenosky T. J., Díaz de la Rubia T., Musgrave C. B., 2005, First-principles calculation of intrinsic defect formation volumes in silicon, Physical Review B, Vol. 72, No. 19, pp. 195206DOI
14 
Watkins G. D., 2000, Intrinsic defects in silicon, Materials Science in Semiconductor Processing, Vol. 3, No. 4, pp. 227-235DOI