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The Transactions of the Korean Institute of Electrical Engineers

The Transactions of the Korean Institute of Electrical Engineers

ISO Journal TitleTrans. Korean. Inst. Elect. Eng.
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  3. 2022-09 (Vol.71 No.9)
  4. 10.5370/KIEE.2022.71.9.1243
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References

1 
W. M. Choi, H. G. Ahn, Feb 2017, The Switching Characteristic and Efficiency of New Generation SiC MOSFET, Journal of the Korea Institute of Information and Communication Engineering, Vol. 21, No. 2, pp. 353-360DOI
2 
J. H. Song, J. S. Kim, K. B. Park, 2021, Performance Comparison of 3-Level 800V Inverter based on 650-V IGBT and 2-Level 800V Inverter based on 1200-V SiC MOSFET for 800-V Electric Propulsion Systems, The Korean Institute of Electrical Engineers, pp. 1219-1220DOI
3 
U. Karki, F. Z. Peng, ECCE, Precursors of gate-oxide degradation in silicon carbide MOSFETs, IEEE, ECCE, Portland, OR, USA, pp. 857-561DOI
4 
X. Ye, C. Chen, Y. Wang, G. Zhai, G. J. Vachtsevanos, Jun 2017, Online condition monitoring of power MOSFET gate oxide degradation based on miller platform voltage, IEEE Trans. Power Electron, Vol. 32, No. 6, pp. 4776-4784DOI
5 
M. Xie, P. Sun, K. Wang, Q. Luo, X. Du, Jun 2022, Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time, IEEE Trans. Power Electron., Vol. 37, No. 6, pp. 7333-7343DOI
6 
U. Karki, N. S. Gonzalez-Santini, F. Z. Peng, Jun 2020, Effect of gate-oxide degradation on electrical parameters of silicon carbide MOSFETs, IEEE Trans. Electron Devices, Vol. 67, No. 6, pp. 2544-2552DOI
7 
U. Karki, F. Z. Peng, Dec 2018, Effect of gate oxide degradation on electrical parameters of power MOSFETs, IEEE Trans. Power Electron, Vol. 33, No. 12, pp. 10764-10773DOI
8 
W. R. Jensen, S. N. Foster, Mar 2021, Online detection of MOSFET gate oxide degradation in a three-phase inverter-drive application, IEEE Trans. Transport. Electrific, Vol. vol 7, No. 1, pp. 50-57DOI
9 
A. J. Lelis, R. Green, D. B. Habersat, M. El, Feb 2015, Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs, IEEE Trans. Electron. Devices, Vol. 62, No. 2, pp. 316-323DOI
10 
B. Gutierrez, S. -S. Kwak, 2020, Cost-Effective Matrix Rectifier Operating With Hybrid Bidirectional Switch Configuration Based on Si IGBTs and SiC MOSFETs, IEEE Access, Vol. 8, pp. 136828-136842DOI
11 
M. H. Ahmed, M. Wang, M. A. S. Hassan, I. Ullah, 2019, Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications, IEEE Access, Vol. 7, pp. 75768-75781DOI
12 
J. Chen, X. Du, Q. Luo, X. Zhang, P. Sun, L. Zhou, Dec 2020, A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices, IEEE Trans. Power Electronics, Vol. 35, No. 12, pp. 13182-13199DOI
13 
T. Liu, T. T. Y. Wong, Z. J. Shen, Mar 2020, A Survey on Switching Oscillations in Power Converters, IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 8, No. 1, pp. 893-908DOI
14 
T. Liu, R. Ning, T. T. Y. Wong, Z. J. Shen, Sept 2016, Modeling and Analysis of SiC MOSFET Switching Oscillations, in IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 4, No. 3, pp. 747-756DOI