| Title |
Interfacial degradation analysis of 4H-SiC MOSFETs through Power Cycling Test |
| Authors |
김미진(Mijin Kim) ; 유다희(Dahui Yoo) ; 이호준(Ho-Jun LEE) |
| DOI |
https://doi.org/10.5370/KIEE.2023.72.2.207 |
| Keywords |
Silicon Carbide; 4H-SiC MOSFETs; Power semiconductor; Power Cycling Test; Interfacial degradation |
| Abstract |
In this paper, we performed a power cycling test (PCT) under harsh operating conditions, such as an average junction temperature (Tjm) of 120°C and a junction temperature gradient (ΔTj) of 110°C to analyze the degradation characteristics of commercial 4H-SiC MOSFETs. For accurate analysis, various electrical characteristics such as output curve, transfer curve, gate leakage current curve, and voltage-capacitance curve were measured before and after PCT and were compared. In addition, transmission electron microscopy (TEM) and simulation were utilized. Both voltage-capacitance curves and TEM images after PCT show degradation of the SiO2/SiC interface. |