Huang Xiucheng, Liu Zhengyang, C. Lee Fred, Li Qiang, February 2015, Characterization and Enhancement of High-Voltage Cascode GaN Devices, IEEE Transactions on Electron Devices, Vol. 62, No. 2

Li He, Li Xiao, Wang Xiaodan, Wang Jin, Alsmadi Yazan, 01-05 October 2017, robustness and degradation, IEEE Energy Conversion Congress and Exposition(ECCE)

Imbruglia Antonio, Saggio Mario, Cascino Salvatore, Minotti Agatino, Renna Marco, Gullotta Giuseppe, Lionetto Antonio, Primosole Stradale, Favre Jacques, Roccaforte Fabrizio, Fiorenza Patrick, Liggio Leoluca, Frisella Salvatore, 02-04 July 2019, WInSiC4AP: Wide Band Gap Innovative SiC for Advanced Power, In AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE)

Huang Bo, Li Yan, Q. Zheng Trillion, Zhang Yajing, 13 November 2014, Design of overcurrent protection circuit for GaN HEMT, in IEEE Energy Conversion Congress and Exposition (ECCE)

Kuwabara Yoshikazu, Wada Keiji, Guichon Jean-Michel, Schanen Jean-Luc, James Roudet and, May-June 2018, Implementation and Performance of a Current Sensor for a Laminated Bus Bar, in IEEE Transactions on Industry Applications, Vol. 54, No. 3, pp. 2579-2587

kim Chul-Min, Kim Jong-soo, November 2022, Study on GaN FET short circuit Characteristics and Development of Effective Short Circuit Protection Method, in IEEE International Conference on Electrical Machines and System (ICEMS)

Jinwoo Kim, Younghoon Cho, 15-19 November 2020, Overcurrent and Short- Circuit Protection Method using Desaturation Detection of SiC MOSFET, in IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (WoW)

Hain Stefan, Bakran Mark-M, 02-06 September 2013, New Rogowski coil design with a high DV/DT immunity and high bandwidth, in 2013 15th European Conference on Power Electronics and Applications (EPE)

A. Lidow, J. Strydom, M. De Rooij, D. Reusch, 2015, GaN Transistors for Efficient Power Conversion, 2nded.: John Wiley & Sons

R. Chu, A. Corrion, M. Chen, R. Li, D. Wong, D. Zehnder, B. Hughes, K. Boutros, 2011, 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance, IEEE Electron Device Letters, Vol. 32, No. 5, pp. 632-634

R. Chu, B. Hughes, M. Chen, D. Brown, R. Li, S. Khalil, D. Zehnder, S. Chen, A. Williams, A. Garrido, 2013, Normally- off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt, in Proc. Device Research Conference

Zhang Wenli, Huang Xiucheng, Liu Zhengyang, C. Lee Fred, She Shuojie, Du Weijing, Li Qiang, February 2016, A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operation, in IEEE Transactions on Power Electronics, Vol. 31, No. 2